rev1.1 1 f-6-3 p-channel enhancement mode field effect transistor PB521BX pdfn 2x2s halogen-free & lead-free niko-sem g s d absolute maximum ratings (t a = 25 c unless otherwise noted) parameters/test conditions symbol limits units drain-source voltage v ds -20 v gate-source voltage v gs 10 v continuous drain current t a = 25 c i d -8 a t a = 70 c -6.4 pulsed drain current 1 i dm 29 power dissipation t a = 25 c p d 2.1 w t a = 70 c 1.4 operating junction & storage temperature range t j , t stg -55 to 150 c thermal resistance ratings thermal resistance symbol typical maximum units junction-to-ambient 2 r ? ja 57 c w 1 pulse width limited by maximum junction temperature. 2 the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. coppe. electrical characteristics (t j = 25 c, unless otherwise noted) parameter symbol test conditions limits unit min typ max static drain-source breakdown voltage v (br)dss v gs = 0v, i d = -250 ? a -20 v gate threshold voltage v gs(th) v ds = v gs , i d = -250 ? a -0.45 -0.6 -0.85 gate-body leakage i gss v ds = 0v, v gs = 10v 100 na zero gate voltage drain current i dss v ds = -16v, v gs = 0v -1 ? a v ds = -10v, v gs = 0v, t j = 55 c -10 drain-source on-state resistance 1 r ds(on) v gs = -1.8v, i d = -1a 24 40 m v gs = -2.5v, i d = -2a 19 28 v gs = -4.5v, i d = -2.5a 15 21 forward transconductance 1 g fs v ds = -10v, i d = -2.5a 21 s product summary v (br)dss r ds(on) i d -20v 21m ? -8a g : gate d : drain s : source
rev1.1 2 f-6-3 p-channel enhancement mode field effect transistor PB521BX pdfn 2x2s halogen-free & lead-free niko-sem dynamic input capacitance c iss v gs = 0v, v ds = -10v, f = 1mhz 1727 pf output capacitance c oss 179 reverse transfer capacitance c rss 155 gate resistance r g v gs = 0v, v ds = 0v, f = 1mhz 10 total gate charge 2 q g v ds = -10v , v ds = -4.5v , i d = -2.5a 21 nc gate-source charge 2 q gs 1.8 gate-drain charge 2 q gd 4.9 turn-on delay time 2 t d(on) v dd = -10v i d ? -2.5a, v gen = -4.5v, r g = 6 28 ns rise time 2 t r 21 turn-off delay time 2 t d(off) 81 fall time 2 t f 48 source-drain diode ratings and characteristics (t j = 25 c) continuous current i s -1.7 a forward voltage 1 v sd i f = -2.5a, v gs = 0v -1.2 v reverse recovery time t rr i f = -2.5a , dl f /dt = 100a / ? s 35 ns reverse recovery charge q rr 18 nc 1 pulse test : pulse width ? 300 ? sec, duty cycle ? 2 . 2 independent of operating temperature.
rev1.1 3 f-6-3 p-channel enhancement mode field effect transistor PB521BX pdfn 2x2s halogen-free & lead-free niko-sem 25 125 0 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 0 5 10 15 20 25 vds=-10v id=-2.5a ciss coss crss 0 400 800 1200 1600 2000 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 vgs=-4.5v id=-2.5a 25 125 -20 0 3 6 9 12 15 18 01234 0 3 6 9 12 15 18 01234 vgs=-4.5v vgs=-3.5v vgs=-2.5v vgs=-1.8v vgs=-1v vgs=-1.3v vgs=--1.5v out p ut characteristics i d , drain-to-source current(a) transfer characteristics i d , drain-to-source current(a) v gs , gate-to-source voltage(v) v ds , drain-to-source voltage(v) t j , junction temperature( ? c) ca p acitance characteristic v ds , drain-to-source voltage(v) gate charge characteristics qg , total gate charge(nc) v gs , gate-to-source voltage(v) source-drain diode forward voltage v sd , source-to-drain voltage(v) i s , source current(a) on-resistance vs tem p erature normalized drain to source on-resistance c , capacitance(pf)
rev1.1 4 f-6-3 p-channel enhancement mode field effect transistor PB521BX pdfn 2x2s halogen-free & lead-free niko-sem dc 100ms 10ms 1ms 0.1 1 10 100 0.1 1 10 100 note : 1.vgs= -4.5v 2.ta=25 ? c 3.r ja = 57 ? c/w 4.single pulse operation in this area is limited by rds(on) single pulse duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 notes 1.duty cycle, d= t1 / t2 2.rthja = 57 /w 3.tj-ta = p*rthja(t) 4.rthja(t) = r(t)*rthja 0 5 10 15 20 25 0.001 0.01 0.1 1 10 100 single pulse r ja = 57 ? c/w ta=25 ? c safe operating area single pulse maximu m power dissipation single pulse time(s) v ds , drain-to-source voltage(v) transient thermal res p onse curve r(t) , normalized effective transient thermal resistance i d , drain current(a) power(w) t 1 , square wave pulse duration[sec]
|
